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5PA SiGe BiCMOS Process
IBM Semiconductor 0.50 Micron
This process is available on taxi and dedicated runs (also known as COT or Customer Owned Tooling). It is not listed on the MOSIS Multi-Project Wafer Run Schedule.
If your design will be used for production, i.e. non-MPW, please read the IBM policy described in "Checking and Error Disposition Strategy for IBM Designs." IBM considers taxi runs as MPW. Designs approved for fabrication on taxi runs may not pass the more stringent design checks required for IBM production runs.
Process DescriptionMOSIS is offering access to the IBM 0.50 micron SiGe BiCMOS 5PA technology for prototype and low volume fabrication. C4 (IBM's flip chip bumping) is subject to availability at additional cost. Advance notice required. Please submit your inquiry through the MOSIS Support System.
This BiCMOS SiGe process has 4 metal (M1+M2+MT+AM) and 1 poly layers, supports MiM capacitor. The thick top layer of metal can be used to make inductors.
5PA Supported Options
Please refer to the 5PA Supported Options runs in this technology. You may not submit a design containing any options or metals stack which are not listed here without prior arrangement with MOSIS. Other configurations are available for dedicated runs.
To ensure that submitted data is on a 25 nm grid, please stream-out at 1 DBU = 25 nm (Cadence 0.025, not 0.001).
MOSIS does not fill for IBM processes. Designs for IBM runs must meet the IBM fill requirements when submitted.
IBM has sub-licensed MOSIS to distribute this information to customers who have signed both the MOSIS customer agreement and the IBM Design Kit License Agreement.
The CAD tool support files, DRC and LVS decks, simulation files, cell libraries, and files listed on the IBM SiGe Design Kits page are the only kits and files available.
Design rules supported by this technology
Only the IBM design rules will be supported for this technology.
MOSIS Technology Codes
The technology code for the 5PA process is IBM_5PA.
Parametric Test Results and SPICE Model ParametersSee Test Results for IBM 0.50 micron runs
Reticle/Wafer Size, Steps, Die and Wafer Thickness
IBM SiGe BiCMOS
|Reticle Size (milli- meters, approx.)||Reticle Copies Stepped on Wafer (approx.)||
(+/- .5 mil)
Bumped Die Thickness *
(+/- .5 mil)
|Mils||Micro- meters||Mils||Micro- meters||Mils||Micro- meters|
|8||18 x 20||60||10||250||10||250||30||760|
* Die thickness only. Does not include height of the bumps.
To order a special bumped die thickness, describe your requirements in the SPECIAL-HANDLING parameter of your New Project, Fabrication, or Update Request.